SSI1N60A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SSI1N60A Datasheet PDF : 7 Pages
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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 1 5 V
100
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
25
20
VGS = 10 V
15
10
VGS = 20 V
5
@ Note : TJ = 25 oC
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
250
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
200
Crss= Cgd
C iss
150
100
C oss
50
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
SSW/I1N60A
Fig 2. Transfer Characteristics
100
150 oC
10-1
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
10-2
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
100
10-1
10-2
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 120 V
10
VDS = 300 V
VDS = 480 V
5
@ Notes : ID = 1.0 A
0
0
2
4
6
8
QG , Total Gate Charge [nC]
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