SST2605(2002) 데이터 시트보기 (PDF) - Secos Corporation.
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SST2605
(Rev.:2002)
(Rev.:2002)
Secos Corporation.
SST2605 Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SST2605
-4.0A, -30V,RDS(ON) 80mΩ
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Drain-Source Breakdown Voltage
BVDSS
Breakdown Voltage Temp. Coefficient
BVDS/ Tj
Gate Threshold Voltage
VGS(th)
Gate-Source Leakage Current
IGSS
Drain-Source Leakage Current (Tj=25oC)
IDSS
Drain-Source Leakage Current (Tj=55 oC)
Static Drain-Source On-Resistance 2
RDS(ON)
Total Gate Charge 2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Qg
Qgs
Qgd
Td(ON)
Tr
Td(Off)
Tf
Ciss
Coss
Crss
Gfs
Min.
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
5.5
1
2.6
7
6
18
4
400
90
30
6
Max.
_
_
-3.0
±100
-1
-25
80
120
8.8
_
_
_
_
_
_
640
_
_
_
Unit Test Condition
V
V/ oC
VGS=0V, ID=-250uA
Reference to 25 oC,ID=-1mA
V
VDS=VGS, ID=-250uA
nA
VGS=±20V
uA
VDS=-30V,VGS=0
uA
VDS=-24V,VGS=0
VGS=-10V, ID=-4.0A
mΩ
VGS=-4.5V, ID=-3.0A
ID=-4.0A
nC
VDS=-24V
VGS=-4.5V
VDD=-15V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=15 Ω
VGS=0V
pF
VDS=-25V
f=1.0MHz
S
VDS=-5V, ID=-4.0A
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VDS
Trr
Qrr
Min.
_
_
_
Typ.
_
21
14
Max.
-1.2
_
_
Unit Test Condition
V
IS=-1.6A, VGS=0V.
nS Is=-4.0A, VGS=0V
nC dl/dt=100A/us
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
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