SST39VF040-55-4I-MKE 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39VF040-55-4I-MKE
Silicon Storage Technology
SST39VF040-55-4I-MKE Datasheet PDF : 24 Pages
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Data Sheet
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
TABLE 5: DC Operating Characteristics -VDD = 3.0-3.6V for SST39LF512/010/020/040 and 2.7-3.6V for
SST39VF512/010/020/0401
Limits
Symbol Parameter
Min
Max
Units Test Conditions
IDD
Power Supply Current
Read2
Program and Erase3
ISB
Standby VDD Current
ILI
Input Leakage Current
Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
20
mA
CE#=VIL, OE#=WE#=VIH, all I/Os open
30
mA
CE#=WE#=VIL, OE#=VIH
15
µA
CE#=VIHC, VDD=VDD Max
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
10
0.8
0.7VDD
µA
VOUT=GND to VDD, VDD=VDD Max
V
VDD=VDD Min
V
VDD=VDD Max
VIHC
Input High Voltage (CMOS)
VDD-0.3
V
VDD=VDD Max
VOL
Output Low Voltage
VOH
Output High Voltage
0.2
VDD-0.2
V
IOL=100 µA, VDD=VDD Min
V
IOH=-100 µA, VDD=VDD Min
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
T5.7 1150
TABLE 6: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1 Power-up to Read Operation
100
µs
TPU-WRITE1 Power-up to Program/Erase Operation
100
µs
T6.1 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T7.0 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: Reliability Characteristics
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1,2
Endurance
10,000
Cycles
JEDEC Standard A117
TDR1
ILTH1
Data Retention
Latch Up
100
100 + IDD
Years
mA
JEDEC Standard A103
JEDEC Standard 78
T8.3 1150
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
©2010 Silicon Storage Technology, Inc.
8
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01/10
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