SST39SF020-90-4C-W 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39SF020-90-4C-W Datasheet PDF : 23 Pages
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2 Megabit (256K x 8) Multi-Purpose Flash
SST39SF020
Preliminary Specifications
FEATURES:
• Organized as 256 K X 8
• Fast Sector Erase and Byte Program:
• Single 5.0V Read and Write Operations
– Sector Erase Time: 7 ms (typical)
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– Chip Erase Time: 15 ms (typical)
• Superior Reliability
– Byte Program time: 20 µs (typical)
– Endurance: 100,000 Cycles (typical)
– Chip Rewrite Time: 5 seconds (typical)
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– Greater than 100 years Data Retention
• Automatic Write Timing
• Low Power Consumption:
- Internal Vpp Generation
– Active Current: 20 mA (typical)
• End of Write Detection
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– Standby Current: 10 µA (typical)
– Toggle Bit
• Sector Erase Capability
– Uniform 4 KByte sectors
– Data# Polling
• TTL I/O Compatibility
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• Fast Read Access Time:
– 70 and 90 ns
• Latched Address and Data
• JEDEC Standard
– EEPROM Pinouts and command set
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• Packages Available
– 32-Pin PDIP
– 32-Pin PLCC
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– 32-Pin TSOP (8mm x 14mm)
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PRODUCT DESCRIPTION
consumption. The SST39SF020 inherently uses less
The SST39SF020 is a 256K x 8 CMOS Multi-Purpose
energy during erase and program than alternative flash
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Flash (MPF) manufactured with SST’s proprietary, high technologies. The total energy consumed is a function of
performance CMOS SuperFlash technology. The split the applied voltage, current, and time of application.
gate cell design and thick oxide tunneling injector attain
Since for any given voltage range, the SuperFlash tech-
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better reliability and manufacturability compared with nology uses less current to program and has a shorter
alternate approaches. The SST39SF020 device writes erase time, the total energy consumed during any Erase
(Program or Erase) with a 5.0V-only power supply. The
SST39SF020 device conforms to JEDEC standard
or Program operation is less than alternative flash tech-
nologies. The SST39SF020 device also improves flex-
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pinouts for x8 memories.
ibility while lowering the cost for program, data, and
Featuring high performance byte program, the
configuration storage applications.
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SST39SF020 device provides a maximum byte-pro- The SuperFlash technology provides fixed Erase and
gram time of 30 µsec. The entire memory can be erased Program times, independent of the number of endurance
and programmed byte by byte typically in 5 seconds,
cycles that have occurred. Therefore the system soft-
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when using interface features such as Toggle Bit or ware or hardware does not have to be modified or de-
Data# Polling to indicate the completion of Program rated as is necessary with alternative flash technologies,
operation. To protect against inadvertent write, the
whose erase and program times increase with accumu-
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SST39SF020 device has on-chip hardware and soft- lated endurance cycles.
ware data protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, the
SST39SF020 device is offered with a guaranteed endur-
ance of 10,000 cycles. Data retention is rated at greater
than 100 years.
To meet high density, surface mount requirements, the
SST39SF020 device is offered in 32-pin TSOP and 32-
pin PLCC packages. A 600 mil, 32-pin PDIP is also
available. See Figures 1 and 2 for pinouts.
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The SST39SF020 device is suited for applications that Device Operation
require convenient and economical updating of program, Commands are used to initiate the memory operation
configuration, or data memory. For all system applica-
functions of the device. Commands are written to the
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tions, the SST39SF020 device significantly improves device using standard microprocessor write sequences.
performance and reliability, while lowering power A command is written by asserting WE# low while
© 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc.
326-10 12/98
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These specifications are subject to change without notice.
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