SST39SF020-90-4C-W 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39SF020-90-4C-W Datasheet PDF : 23 Pages
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2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
TABLE 5: DC OPERATING CHARACTERISTICS VCC = 5V±10%
Limits
Symbol Parameter
Min Max
ICC
Power Supply Current
Read
30
Write
ISB1
Standby VCC Current
(TTL input)
ISB2
Standby VCC Current
(CMOS input)
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
VH
Supervoltage for A9 pin
IH
Supervoltage Current
for A9 pin
50
3
50
1
1
0.8
2.0
0.4
2.4
11.4 12.6
200
TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
TPU-READ(1)
TPU-WRITE(1)
Power-up to Read Operation
Power-up to Write Operation
Units
mA
mA
mA
Test Conditions
CE#=OE#=VIL,WE#=VIH , all I/Os open,
Address input = VIL/VIH, at f=1/TRC Min.,
VCC=VCC Max
CE#=WE#=VIL, OE#=VIH, VCC =VCC Max.
CE#=VIH, VCC =VCC Max.
µA CE#=VCC -0.3V.
VCC = VCC Max.
µA
VIN =GND to VCC, VCC = VCC Max.
µA
VOUT =GND to VCC, VCC = VCC Max.
V
VCC = VCC Max.
V
VCC = VCC Max.
V
IOL = 2.1 mA, VCC = VCC Min.
V
IOH = -400µA, VCC = VCC Min.
V
CE# = OE# =VIL, WE# = VIH
µA CE# = OE# = VIL, WE# = VIH, A9 = VH Max.
326 PGM T5.2
Minimum
100
100
Units
µs
µs
326 PGM T6.1
TABLE 7: CAPACITANCE (Ta = 25 °C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
CI/O(1)
CIN(1)
I/O Pin Capacitance
Input Capacitance
VI/O = 0V
VIN = 0V
Maximum
12 pF
6 pF
326 PGM T7.0
Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
NEND(1)
TDR(1)
VZAP_HBM(1)
VZAP_MM(1)
ILTH(1)
Endurance
Data Retention
ESD Susceptibility
Human Body Model
ESD Susceptibility
Machine Model
Latch Up
10,000
100
1000
200
100 + ICC
Units
Cycles
Years
Volts
Volts
mA
Test Method
MIL-STD-883, Method 1033
JEDEC Standard A103
JEDEC Standard A114
JEDEC Standard A115
JEDEC Standard 78
326 PGM T8.3
Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
© 1998 Silicon Storage Technology, Inc.
8
326-10 12/98
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