SST39SF020-90-4I-P 데이터 시트보기 (PDF) - Silicon Storage Technology
부품명
상세내역
제조사
SST39SF020-90-4I-P Datasheet PDF : 23 Pages
| |||
2 Megabit Multi-Purpose Flash
SST39SF020
Preliminary Specifications
AC CHARACTERISTICS
TABLE 9: READ CYCLE TIMING PARAMETERS VCC = 4.5-5.5V
1
SST39SF020-70 SST39SF020-90
Symbol Parameter
Min Max Min Max Units
TRC
Read Cycle time
70
90
ns
2
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
3
TOE
Output Enable Access Time
35
45
ns
TCLZ(1) CE# Low to Active Output
0
0
ns
TOLZ(1) OE# Low to Active Output
0
0
ns
4
TCHZ(1) CE# High to High-Z Output
15
20
ns
TOHZ(1) OE# High to High-Z Output
15
TOH(1)
Output Hold from Address Change
0
0
20
ns
ns
5
Note: CL = 100 pF for 90 ns, CL = 30 pF for 70 ns
326 PGM T9.2
6
TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS
7
Symbol Parameter
Min
Max
Units
TBP
Byte Program time
30
µs
TAS
Address Setup Time
0
ns
8
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
9
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
0
ns
10
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
11
TWPH (1)
WE# Pulse Width High
30
ns
TCPH (1)
CE# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
12
TDH (1)
Data Hold Time
0
ns
TIDA (1)
TSE
Software ID Access and Exit Time
Sector Erase
150
ns
10
ms
13
TSCE
Chip Erase
20
ms
326 PGM T10.4
Note: (1)This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
14
15
16
© 1998 Silicon Storage Technology, Inc.
9
326-10 12/98
Share Link: 