SST39VF088 데이터 시트보기 (PDF) - Silicon Storage Technology
부품명
상세내역
제조사
SST39VF088 Datasheet PDF : 22 Pages
| |||
8 Mbit Multi-Purpose Flash
SST39VF088
AC CHARACTERISTICS
Preliminary Specifications
TABLE 9: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V
SST39VF088-70
SST39VF088-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
35
45
ns
TCLZ1
CE# Low to Active Output
0
TOLZ1
OE# Low to Active Output
0
0
ns
0
ns
TCHZ1 CE# High to High-Z Output
20
30
ns
TOHZ1
TOH1
OE# High to High-Z Output
Output Hold from Address Change
20
30
ns
0
0
ns
T9.0 1227
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
TBP
Byte-Program Time
TAS
Address Setup Time
TAH
Address Hold Time
20
µs
0
ns
30
ns
TCS
TCH
TOES
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
0
ns
0
ns
0
ns
TOEH
TCP
TWP
TWPH1
TCPH1
TDS
TDH1
TIDA1
TSE
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
10
ns
40
ns
40
ns
30
ns
30
ns
30
ns
0
ns
150
ns
25
ms
TBE
TSCE
Block-Erase
Chip-Erase
25
ms
100
ms
T10.0 1227
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2003 Silicon Storage Technology, Inc.
9
S71227-04-000
11/03
Share Link: 