SST39LF160 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST39LF160

16 Mbit (x16) Multi-Purpose Flash

Silicon Storage Technology 

16 Mbit Multi-Purpose Flash

SST39LF160 / SST39VF160

Data Sheet

TABLE 8: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST39LF160 AND 2.7-3.6V FOR SST39VF160

Limits

Symbol Parameter

Min Max Units Test Conditions

IDD

ISB

IALP

ILI

ILO

VIL

VILC

VIH

VIHC

VOL

VOH

Power Supply Current

Read

Program and Erase

Standby VDD Current

Auto Low Power Current

Input Leakage Current

Output Leakage Current

Input Low Voltage

Input Low Voltage (CMOS)

Input High Voltage

Input High Voltage (CMOS)

Output Low Voltage

Output High Voltage

20

25

20

20

1

10

0.8

0.3

0.7 VDD

VDD-0.3

0.2

VDD-0.2

Address input=VIL/VIH, at f=1/TRC Min.,

VDD=VDD Max.

mA CE#=OE#=VIL,WE#=VIH, all I/Os open

mA CE#=WE#=VIL, OE#=VIH

µA CE#=VIHC, VDD=VDD Max.

µA CE#=VIHC, VDD=VDD Max.,

all inputs = VIHC or VILC, WE#=VIHC

µA VIN=GND to VDD, VDD=VDD Max.

µA VOUT=GND to VDD, VDD=VDD Max.

V VDD=VDD Min.

V VDD=VDD Max.

V VDD=VDD Max.

V VDD=VDD Max.

V IOL=100 µA, VDD=VDD Min.

V IOH = -100 µA, VDD=VDD Min.

T8.3 399

TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Program/Erase Operation

100

µs

T9.0 399

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

CIN1

I/O Pin Capacitance

Input Capacitance

VI/O = 0V

VIN = 0V

12 pF

6 pF

T10.0 399

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 11: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

Endurance

10,000

Cycles JEDEC Standard A117

TDR1

Data Retention

100

Years JEDEC Standard A103

ILTH1

Latch Up

100 + IDD

mA JEDEC Standard 78

T11.1 399

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

10

S71145-02-000 6/01 399

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