SST39VF160 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39VF160 Datasheet PDF : 26 Pages
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16 Mbit Multi-Purpose Flash
SST39LF160 / SST39VF160
Data Sheet
AC CHARACTERISTICS
TABLE 12: READ CYCLE TIMING PARAMETERS VDD = 3.0-3.6V FOR SST39LF160 AND 2.7-3.6V FOR SST39VF160
SST39LF160-55 SST39VF160-70 SST39VF160-90
Symbol Parameter
Min
Max
Min
Max
Min
Max Units
TRC
TCE
TAA
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
55
70
90
55
70
90
55
70
90
30
35
45
0
0
0
0
0
0
15
20
30
15
20
30
0
0
0
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T12.2 399
TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol
TBP
TAS
TAH
TCS
TCH
TOES
TOEH
TCP
TWP
TWPH1
TCPH1
TDS
TDH1
TIDA1
TSE
TBE
TSCE
Parameter
Word-Program Time
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Block-Erase
Chip-Erase
Min
Max
20
0
30
0
0
0
10
40
40
30
30
30
0
150
25
25
100
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Units
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ms
T13.0 399
©2001 Silicon Storage Technology, Inc.
11
S71145-02-000 6/01 399
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