SST39VF160-90_98 데이터 시트보기 (PDF) - Silicon Storage Technology

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SST39VF160-90_98

16 Megabit (1M x 16-Bit) Multi-Purpose Flash

Silicon Storage Technology 

16 Megabit Multi-Purpose Flash

SST39VF160Q / SST39VF160

Advance Information

TABLE 8: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V AND VDDQ = VDD OR 4.5V - 5.5V

Limits

Symbol Parameter

Min Max Units Test Conditions

1

IDD

Power Supply Current

Read

Program and Erase

CE#=OE#=VIL,WE#=VIH , all I/Os open,

20

mA Address input = VIL/VIH, at f=1/TRC Min.

25

mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max.

2

ISB

Standby VDD Current

10

µA

CE#=VIHC, VDD = VDD Max.

IALP

Auto Low Power Current

ILI

Input Leakage Current

10

µA

CE#=VIHC, VDD = VDD Max.

1

µA

VIN =GND to VDD, VDD = VDD Max.

3

ILO

Output Leakage Current

1

µA

VOUT =GND to VDD, VDD = VDD Max.

VIL

Input Low Voltage

0.8

V

VDD = VDD Max.

4

VILC

Input Low Voltage (CMOS) 0.3

V

VDD = VDD Max.

VIH

Input High Voltage

2.0

V

VDD = VDD Max.

VIHC

Input High Voltage (CMOS) VDD-0.3

V

VDD = VDD Max.

5

VOL

Output Low Voltage

0.4

V

IOL = 100 µA, VDD = VDD Min.

VOH

Output High Voltage

2.4

V

IOH = -100 µA, VDD = VDD Min.

6

VH

Supervoltage for A9 pin

11.4 12.6

V

CE# = OE# =VIL, WE# = VIH

IH

Supervoltage Current

for A9 pin

200

µA

CE# = OE# = VIL, WE# = VIH, A9 = VH Max.

7

329 PGM T9.8

TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

TPU-READ(1)

TPU-WRITE(1)

Power-up to Read Operation

Power-up to Program/Erase

Operation

Minimum

100

100

8

Units

µs

µs

9

TABLE 10: CAPACITANCE (Ta = 25 °C, f=1 Mhz, other pins open)

329 PGM T10.2

10

Parameter

Description

Test Condition

Maximum (TSOP) Maximum (TFBGA)

CI/O(1)

I/O Pin Capacitance

VI/O = 0V

12 pF

12pF

11

CIN(1)

Input Capacitance

VIN = 0V

6 pF

6pF

329 PGM T11.1

Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

12

TABLE 11: RELIABILITY CHARACTERISTICS

13

Symbol

Parameter

Minimum Specification Units Test Method

NEND(1)

Endurance

10,000

Cycles MIL-STD-883, Method 1033

14

TDR(1)

Data Retention

100

Years JEDEC Standard A103

VZAP_HBM(1) ESD Susceptibility

1000

Volts JEDEC Standard A114

Human Body Model

15

VZAP_MM(1) ESD Susceptibility

200

Volts JEDEC Standard A115

Machine Model

ILTH(1)

Latch Up

100 + IDD

mA JEDEC Standard 78

16

329 PGM T12.2

Note: (1) This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

© 1998 Silicon Storage Technology, Inc.

9

329-09 11/98

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