ST1S30 데이터 시트보기 (PDF) - STMicroelectronics
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ST1S30
STMicroelectronics
ST1S30 Datasheet PDF : 11 Pages
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Electrical characteristics
4
Electrical characteristics
ST1S30
Refer to Figure 3 application circuit VIN_SW = VIN_A = 5 V, VO = 1.2 V, C1 = 10 µF,
C2 = 22 µF, L1 = 2.2 µH, TJ = -25 to 125 °C (unless otherwise specified. Typical values are
referred to 25 °C)
Table 6. Electrical characteristics for ST1S30
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
FB Feedback voltage
784 800 816 mV
IFB
VI
UVLO
VFB pin bias current
Input voltage
Under voltage lock out
threshold
IO = 10 mA to 3 A
VI Rising
Hysteresis
600 nA
2.7
5.5 V
2.3
V
150
mV
OVP
Overvoltage protection
threshold
Overvoltage protection
hysteresis
VO rising
VO falling
1.05 VO 1.1 VO
V
5
%
IOVP Overvoltage clamping current VO = 1.2 V
300
mA
IQ
Quiescent current
IO
Output current
VINH > 1.2 V, not switching
VINH < 0.0 V, T = - 30 °C to 85 °C
VI = 2.7 to 5.5 V (1)
3
1.5
2.5
mA
1
A
%VO/ΔVI Output line regulation
%VO/ΔIO Output load regulation
VI = 2.7 V to 5.5 V, IO = 100 mA (1)
IO = 10 mA to 3 A (1)
0.16
0.2
%VO/
ΔVI
%
PWMfS PWM switching frequency
VFB = 0.65 V
1.2
1.5
1.8 MHz
DMAX Maximum duty cycle
80
87
%
Power good output threshold
PG
Power good output voltage low ISINK = 6 mA open drain output
0.92 VO
V
0.4 V
RDSON-N NMOS switch on resistance ISW = 750 mA
0.1
Ω
RDSON-P PMOS switch on resistance
ISWL Switching current limitation
ISW = 750 mA
(1)
0.1
Ω
3.7
4.4
5.1
A
ν
Efficiency (1)
IO = 10 mA to 100 mA, VO = 3.3 V 65
%
IO = 100 mA to 3 A, VO = 3.3 V
85
TSHDN Thermal shutdown
150
°C
THYS Thermal shutdown hysteresis
20
°C
%VO/ΔIO Load transient response
IO = 100 mA to 1 A, TA = 25 °C
tR = tF ≥ 200 ns (1)
-10
+10 %VO
%VO/ΔIO
Short circuit removal response
IO = 10 mA to IO = short,
TA = 25 °C (1)
-10
+10 %VO
1. Guaranteed by design, but not tested in production.
6/11
Doc ID 17927 Rev 1
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