STA306 데이터 시트보기 (PDF) - STMicroelectronics
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STA306 Datasheet PDF : 33 Pages
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STA306
ELECTRICAL CHARACTERISTCS (VDD3 = 3.3V ± 0.3V; VDD = 2.5V ± 0.2V; Tamb = 0 to 70 °C; unless other-
wise specified)
GENERAL INTERFACE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit Note
Iil
Low Level Input no pull-up
Vi = 0V
1
µA
1
Iih High Level Input no pull-down
Vi = VDD3
2
µA
1
IOZ Tristate output leakage without Vi = VDD3
pullup/down
2
µA
1
Vesd Electrostatic Protection
Leakage < 1µA
2000
V
2
Note 1: The leakage currents are generally very small, < 1na. The values given here are maximum after an electrostatic stress on the pin.
Note 2: Human Body Model
DC ELECTRICAL CHARACTERISTICS: 3.3V BUFFERS
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
VIL
Low Level Input Voltage
0.8
V
VIH
High Level Input Voltage
2.0
V
VILhyst Low Level Threshold
Input Falling
0.8
1.35
V
VIHhyst High Level Threshold
Input Rising
1.3
2.0
V
Vhyst
Schmitt Trigger Hysteresis
0.3
0.8
V
Vol
Low Level Output
IoI = 100uA
0.2
V
Voh
High Level Output
Ioh = -100uA
VDD3-0.2
V
Ioh = -2mA
2.4
V
DC ELECTRICAL CHARACTERISTICS: 2.5V BUFFERS
Symbol
Parameter
Test Condition
VILst
Low Level Input Voltage
Schmitt input
VIHst
High Level Input Voltage
Schmitt input
VILhyst Low Level Threshold
non Schmitt, Input
Falling
VIHhyst High Level Threshold
non Schmitt, Input
Rising
Vhyst
Schmitt Trigger Hysteresis
VOL
Low Level Output
Note 1
VOH
High Level Output
Note 1
Notes: 1. Source/Sink current under worst-case conditions.
Min.
Typ.
Max.
Unit
0.26*VDD
V
0.7*VDD
V
0.5*VDD
V
1.3
0.5*VDD
2.0
V
0.23*VDD
0.85*VDD
V
0.15*VDD
V
V
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