STB100NF03L-03 데이터 시트보기 (PDF) - STMicroelectronics
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STB100NF03L-03 Datasheet PDF : 11 Pages
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STB100NF03L-03 STP100NF03L-03 STB100NF03L-03-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
°C/W
°C/W
°C
Max.
Unit
V
1
µA
10
µA
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 50 A
ID = 50 A
Min.
1
Typ. Max.
1.7
2.5
0.0026 0.0032
0.0032 0.0045
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS>ID(on)xRDS(on)max ID=10 A
VDS = 25V f = 1 MHz VGS = 0
Min.
10
Typ.
6200
1720
300
Max.
Unit
S
pF
pF
pF
2/11
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