STP270N04 데이터 시트보기 (PDF) - STMicroelectronics

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STP270N04

N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET™ Power MOSFET

STMicroelectronics 

STB270N04-1 - STB270N04 - STP270N04

2

Electrical characteristics

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test Condictions

V(BR)DSS

Drain-Source

Breakdown Voltage

ID = 250µA, VGS= 0

IDSS

Zero Gate Voltage Drain VDS = Max Rating,

Current (VGS = 0)

VDS = MaxRating

@125°C

IGSS

Gate Body Leakage

Current

(VDS = 0)

VGS = ±20V

VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA

RDS(on)

Static Drain-Source On

Resistance

VGS= 10V, ID= 80A

Min. Typ. Max. Unit

40

V

10 µA

100 µA

±200 nA

2

TO-220

I²PAK

D²PAK

4V

2.5 2.9 mΩ

2.1 2.5 mΩ

Table 4. Dynamic

Symbol

Parameter

Test Condictions

gfs (1) Forward Transconductance VDS =15V, ID = 80A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS =25V, f=1 MHz, VGS=0

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDD=20V, ID = 160A

VGS =10V

(see Figure 2)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

200

S

7400

pF

1800

pF

47

pF

110 150 nC

27

nC

25

nC

Rev3

3/14

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