STF9NK60ZD 데이터 시트보기 (PDF) - STMicroelectronics
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STF9NK60ZD
STMicroelectronics
STF9NK60ZD Datasheet PDF : 16 Pages
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STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (2)
PTOT
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuos) at TC = 25°C
Drain current (continuos) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
dv/dt (3) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Tj Operating junction temperature
Tstg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD < 7A, di/dt < 500A/µs, VDD =80%V(BR)DSS
Value
D²PAK/TO-220 TO-220FP
600
± 30
7
7 (1)
4.3
4.3 (1)
28
28 (1)
125
30
1
0.24
4000
15
--
2500
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Table 2. Thermal data
Thermal resistance junction-pcb Max
Rthj-pcb
(when mounted on minimum footprint)
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
TO-220/D²PAK TO-220FP
30
--
°C/W
1
4.16
62.5
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25°C, ID = IAR, VDD = 50V)
Max value
Unit
7
A
235
mJ
3/16
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