STC128M 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD
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STC128M Datasheet PDF : 4 Pages
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STC128M
NPN Silicon Transistor
Features
• Low saturation medium current application
• Extremely low collector saturation voltage
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : RON=0.6Ω(Max.) (IB=1mA)
PIN Connection
E
C
B
Ordering Information
Type NO.
Marking
STC128M
C128
Package Code
TO-92M
TO-92M
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
20
15
6.5
1
400
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
BVCBO IC=50μA, IE=0
Collector-Emitter breakdown voltage
Emitter-base breakdown voltage
BVCEO
BVEBO
IC=1mA, IB=0
IE=50μA, IC=0
Collector cut-off current
ICBO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB=6V, IC=0
DC current gain
hFE
VCE=1V, IC=100mA
Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA
Transistor frequency
fT
VCE=5V, IC=50mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
On resistance
RON
f=1KHz, IB=1Ma, VIN=0.3V
Min. Typ. Max.
20
-
-
15
-
-
6.5
-
-
-
-
0.1
-
-
0.1
150
-
-
-
0.1 0.3
-
260
-
-
5
-
-
0.6
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
Ω
KSD-T0B003-000
1
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