STC221F 데이터 시트보기 (PDF) - Kodenshi Auk Co., LTD

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STC221F

NPN Silicon Transistor

Kodenshi Auk Co., LTD 

STC221F

Electrical Characteristics

Characteristic

Symbol

Test Condition

(Ta=25°C)

Min. Typ. Max. Unit

Collector-Base breakdown voltage

BVCBO

IC=100μA, IE=0

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

Emitter-Base breakdown voltage

BVEBO

IE=10μA, IC=0

Collector cut-off current

ICBO

VCB=45V, IE=0

Emitter cut-off current

DC current gain

IEBO

hFE*

VEB=5V, IC=0

VCE=1V, IC=100mA

Collector-Emitter saturation voltage

VCE(sat)

IC=500mA, IB=50mA

Transition frequency

fT

VCE=5V, IC=10mA

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

* Note 1) hFE Rank : 160~320 only

* Note 2) Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%

45

-

-

V

40

-

-

V

5

-

-

V

-

-

0.1

μA

-

-

0.1

μA

160

-

320

-

-

-

0.5

V

-

150

-

MHz

-

8

-

pF

KSD-T5B019-001

2

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