3NK60ZD 데이터 시트보기 (PDF) - STMicroelectronics

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3NK60ZD

N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET

STMicroelectronics 

STD3NK60ZD

1

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Parameter

VDS

VGS

ID

ID

IDM (1)

PTOT

dv/dt (2)

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 2 5°C

Derating factor

Peak diode recovery voltage slope

Tj Operating junction temperature

Tstg Storage temperature

1. Pulse width limited by safe operating area

2. ISD ≤ 2.4 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS

Table 3.

Symbol

Thermal data

Parameter

Rthj-amb Thermal resistance junction-ambient max

Rthj-pcb Thermal resistance junction-pcb max

Tl

Maximum lead temperature for soldering

purpose

Table 4.

Symbol

Avalanche characteristics

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

Single pulse avalanche energy

EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Electrical ratings

Value

600

± 30

2.4

1.51

9.6

45

0.36

15

-55 to 150

Unit

V

V

A

A

A

W

W/°C

V/ns

°C

Value

100

50

300

Max value

2.4

150

Unit

°C/W

°C/W

°C

Unit

A

mJ

3/14

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