STGD3NB60F 데이터 시트보기 (PDF) - STMicroelectronics
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STGD3NB60F Datasheet PDF : 14 Pages
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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
VECR
VGE
IC
IC
ICM ( )
If (1)
Ifm (1)
PTOT
Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C
Collector Current (continuous) at TC = 100°C
Collector Current (pulsed)
Forward Current
Forward Current Pulsed
Total Dissipation at TC = 25°C
Derating Factor
VISO
Tstg
Tj
Insulation Withstand Voltage A.C.
Storage Temperature
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) For “D” version only
Value
TO-220/D2PAK TO-220FP
600
20
±20
6
3
24
3
24
68
25
0.55
0.2
--
2500
– 55 to 150
150
DPAK
60
0.47
--
Unit
V
V
V
A
A
A
A
A
W
W/°C
V
°C
°C
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-heatsink Typ
TO-220/D2PAK TO-220FP
1.8
5
62.5
0.5
DPAK
2.1
100
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25°C
VCE = Max Rating, TC = 125°C
50
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100 nA
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250 µA
3
5
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15 V, IC = 3 A
VGE = 15 V, IC = 3 A, Tj =125°C
1.9
2.4
V
1.6
V
2/14
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