STGD3NB60F 데이터 시트보기 (PDF) - STMicroelectronics
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STGD3NB60F Datasheet PDF : 14 Pages
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STGP3NB60F/STGD3NB60F/STGP3NB60FD/STGF3NB60FD/STGB3NB60FD
SWITCHING PARAMETERS
Symbol
Parameter
gfs
Forward Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
td(on)
tr
Turn-on Delay Time
Rise Time
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
tc
tr(Voff)
td(off)
tf
Eoff(**)
Ets
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Test Conditions
VCE = 25 V, Ic = 3 A
VCE = 25 V, f = 1 MHz, VGE = 0
Min.
VCE = 480 V, IC = 3 A,
VGE = 15 V
VCC = 480 V, IC = 3 A
RG = 10Ω, VGE = 15 V
VCC= 480 V, IC = 3 A RG=10Ω
VGE = 15 V,Tj = 125°C
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 25 °C
Vcc = 480 V, IC = 3 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
Typ.
2
230
33
6
16
1.5
8
12.5
4
840
31
220
60
105
150
125
149
490
174
230
305
295
326
Max. Unit
S
pF
pF
pF
20
nC
nC
nC
ns
ns
A/µs
µJ
ns
ns
ns
ns
µJ
µJ
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE (“D” VERSION)
Symbol
Parameter
Test Conditions
Vf
Forward On-Voltage
If = 1.5 A
If = 1.5 A, Tj = 125 °C
trr
Reverse Recovery Time
If = 3 A ,VR = 35 V,
Qrr
Reverse Recovery Charge Tj =125°C, di/dt = 100 A/µs
Irrm
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Min.
Typ.
1.31
0.95
45
70
2.7
Max. Unit
1.8
V
V
ns
nC
A
3/14
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