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STGP7NB60 데이터 시트보기 (PDF) - STMicroelectronics
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STGP7NB60
N-CHANNEL 7A - 600V TO-220 PowerMESH™ IGBT
STMicroelectronics
STGP7NB60 Datasheet PDF : 8 Pages
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STGP7NB60H
THERMAL DATA
R
thj-case
R
th j -a mb
R
thc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
1.56
62.5
0. 5
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
j
= 25
o
C unless otherwise specified)
OFF
Symbol
V
BR(CES)
I
CES
I
GES
Parameter
Collector-Emitt er
Breakdown Voltage
Collector cut-off
(V
GE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
Test Conditions
I
C
= 250
µ
A V
GE
= 0
V
CE
= Max Rat ing
V
CE
= Max Rat ing
V
GE
=
±
20 V
T
j
= 25
o
C
T
j
= 125
o
C
V
CE
= 0
Min.
600
Typ. Max. Unit
V
10
µ
A
100
µ
A
±
100 nA
ON (
∗
)
Symbol
V
GE(th)
V
CE(SAT )
Parameter
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
V
CE
= V
GE
I
C
= 250
µ
A
Min. Typ. Max. Unit
3
5
V
V
GE
= 15 V I
C
= 7 A
V
GE
= 15 V I
C
= 7 A
T
j
= 125
o
C
2.3
2.8
V
1.9
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g
f s
Forward
Transconductance
V
CE
=25 V
I
C
= 7 A
3.5
5
S
C
ies
C
o es
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25 V f = 1 MHz V
GE
= 0
390 560 730
pF
45
68
90
pF
10
15
20
pF
Q
G
Q
GE
Q
GC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480 V
I
C
= 7 A
V
GE
= 15 V
42
55
nC
7.9
nC
17.6
nC
I
CL
Latching Current
V
clamp
= 480 V R
G
=10
Ω
28
A
T
j
= 150
o
C
SWITCHING ON
Symbol
t
d(on)
t
r
( di / dt )
o n
E
o n
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
V
CC
= 480 V
V
GE
= 15 V
I
C
= 7 A
R
G
= 10
Ω
V
CC
= 480 V
R
G
= 10
Ω
T
j
= 125
o
C
I
C
= 7 A
V
GE
= 15 V
Min.
Typ.
15
48
160
70
Max.
U nit
ns
ns
A/
µ
s
µ
J
2/8
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