STK1820F 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP
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STK1820F Datasheet PDF : 8 Pages
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STK1820F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
④
Forward transfer admittance ④
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
ID=250µA, VGS=0
ID=250µA, VDS= VGS
VDS=200V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=9A
VDS=40V, ID=9A
VGS=0V, VDS=25V, f=1MHz
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=100V, ID=18A
RG=25Ω
③④
VDD=100V, VGS=10V
ID=18A
③④
Min.
200
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.14
8.5
840
150
22
24
29
68
29
30
4.8
11.5
(Tc=25°C)
Max. Unit
-
V
4.0
V
10
µA
±100 nA
0.17
Ω
-
S
1260
225
pF
33
36
43
ns
102
43
45
7.2
nC
17.3
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Continuous source current
Source current (Pulsed)
①
IS
Integral reverse diode
ISP
in the MOSFET
Forward voltage
④
VSD
VGS=0V, IS=18A
Reverse recovery time
Reverse recovery charge
trr
Is=18A, VGS=0V
Qrr
dis/dt=100A/us
Min
-
-
-
-
-
Typ
-
-
-
253
2.63
(Tc=25°C)
Max Unit
18
A
72
1.4
V
-
ns
-
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ㅛ
② L=2.0mH, IAS=18A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T0O011-000
3
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