STK22C48-P20 데이터 시트보기 (PDF) - Simtek Corporation
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STK22C48-P20 Datasheet PDF : 15 Pages
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STK22C48
nvSRAM OPERATION
The STK22C48 has two separate modes of opera-
tion: SRAM mode and nonvolatile mode. In SRAM
mode, the memory operates as a standard fast static
RAM. In nonvolatile mode, data is transferred from
SRAM to Nonvolatile Elements (the STORE opera-
tion) or from Nonvolatile Elements to SRAM (the
RECALL operation). In this mode SRAM functions are
disabled.
NOISE CONSIDERATIONS
The STK22C48 is a high-speed memory and so
must have a high-frequency bypass capacitor of
approximately 0.1μF connected between VCAP and
VSS, using leads and traces that are as short as pos-
sible. As with all high-speed CMOS ICs, normal care-
ful routing of power, ground and signals will help
prevent noise problems.
SRAM READ
The STK22C48 performs a READ cycle whenever E
and G are low and W and HSB are high. The
address specified on pins A0-10 determines which of
the 2,048 data bytes will be accessed. When the
READ is initiated by an address transition, the out-
puts will be valid after a delay of tAVQV (READ cycle
#1). If the READ is initiated by E or G, the outputs will
be valid at tELQV or at tGLQV, whichever is later (READ
cycle #2). The data outputs will repeatedly respond to
address changes within the tAVQV access time without
the need for transitions on any control input pins, and
will remain valid until another address change or until
E or G is brought high, or W or HSB is brought low.
SRAM WRITE
A WRITE cycle is performed whenever E and W are
low and HSB is high. The address inputs must be
stable prior to entering the WRITE cycle and must
remain stable until either E or W goes high at the
end of the cycle. The data on the common I/O pins
DQ0-7 will be written into the memory if it is valid tDVWH
before the end of a W controlled WRITE or tDVEH
before the end of an E controlled WRITE.
It is recommended that G be kept high during the
entire WRITE cycle to avoid data bus contention on
common I/O lines. If G is left low, internal circuitry
will turn off the output buffers tWLQZ after W goes low.
POWER-UP RECALL
During power up, or after any low-power condition
(VCAP < VRESET), an internal RECALL request will be
latched. When VCAP once again exceeds the sense
voltage of VSWITCH, a RECALL cycle will automatically
be initiated and will take tRESTORE to complete.
If the STK22C48 is in a WRITE state at the end of
power-up RECALL, the SRAM data will be corrupted.
To help avoid this situation, a 10K Ohm resistor
should be connected either between W and system
VCC or between E and system VCC.
AutoStore OPERATION
The STK22C48 can be powered in one of three
modes.
During normal AutoStore operation, the STK22C48
will draw current from VCCX to charge a capacitor
connected to the VCAP pin. This stored charge will be
used by the chip to perform a single STORE opera-
tion. After power up, when the voltage on the VCAP
pin drops below VSWITCH, the part will automatically
disconnect the VCAP pin from VCCX and initiate a
STORE operation.
Figure 2 shows the proper connection of capacitors
for automatic store operation. A charge storage
capacitor having a capacity of between 68μF and
220μF (± 20%) rated at 6V should be provided.
In system power mode (Figure 3), both VCCX and
VCAP are connected to the + 5V power supply without
the 68μF capacitor. In this mode the AutoStore func-
tion of the STK22C48 will operate on the stored sys-
tem charge as power goes down. The user must,
however, guarantee that VCCX does not drop below
3.6V during the 10ms STORE cycle.
If an automatic STORE on power loss is not required,
then VCCX can be tied to ground and + 5V applied to
VCAP (Figure 4). This is the AutoStore Inhibit mode,
in which the AutoStore function is disabled. If the
STK22C48 is operated in this configuration, refer-
ences to VCCX should be changed to VCAP throughout
this data sheet. In this mode, STORE operations may
be triggered with the HSB pin. It is not permissible to
change between these three options “on the fly.”
In order to prevent unneeded STORE operations,
automatic STOREs as well as those initiated by
externally driving HSB low will be ignored unless at
Document Control #ML0004 Rev 0.3
8
February 2007
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