STP10NB20 데이터 시트보기 (PDF) - STMicroelectronics

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STP10NB20

N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET

STMicroelectronics 

STP10NB20

STP10NB20FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH™ MOSFET

TYPE

V DSS

RDS(on)

ID

STP10NB20

S TP1 0NB 20F P

200 V

200 V

< 0.40 Ω

< 0.40 Ω

10 A

6A

s TYPICAL RDS(on) = 0.3 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s VERY LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-220

3

2

1

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS Drain-source Voltage (VGS = 0)

VD GR

VGS

ID

ID

Drain- gate Volt age (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•) Drain Current (pulsed)

Ptot Total Dissipation at Tc = 25 oC

Derating Factor

dv/dt(1) Peak Diode Recovery voltage slope

VISO Insulation Withstand Voltage (DC)

Tstg Storage T emperat ure

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

November 1997

Value

Unit

STP10NB20 STP10NB20FP

200

V

200

V

± 30

V

10

6

A

6

4

A

40

40

A

85

0.68

30

0.24

W

W/oC

5.5

5.5

V/ns

2000

V

-65 to 150

oC

150

oC

(1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

1/9

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