STD8NM50N(2018) 데이터 시트보기 (PDF) - STMicroelectronics

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STD8NM50N
(Rev.:2018)

N-channel 500 V, 0.73 Ω typ., 5 A, MDmesh™ II Power MOSFETs in DPAK and TO-220 packages

STMicroelectronics 

STD8NM50N, STP8NM50N

Electrical ratings

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

Drain-source voltage

VGS

Gate-source voltage

Drain current (continuous) at Tcase = 25 °C

ID

Drain current (continuous) at Tcase = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

Tstg

Storage temperature range

Tj

Operating junction temperature range

1. Limited by maximum junction temperature

2. ISD ≤ 5 A, di/dt ≤ 400 A/μs, VDS(Peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Value

500

±25

5

3

20

45

15

-55 to 150

Unit

V

A

A

W

V/ns

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Thermal resistance junction-case

Rthj-amb

Thermal resistance junction-ambient

Rthj-pcb(1)

Thermal resistance junction-pcb

1. When mounted on an 1 inch² FR-4, 2 Oz copper board

Value

DPAK

TO-220

2.78

62.5

50

Unit

°C/W

°C/W

°C/W

Table 3. Avalanche characteristics

Symbol

IAR

EAS

Parameter

Avalanche current, repetitive or non-repetitive (pulse width limited by TJmax)

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Value

2

140

Unit

A

mJ

DS6808 - Rev 7

page 2/21

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