STD8NM50N(2018) 데이터 시트보기 (PDF) - STMicroelectronics

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STD8NM50N
(Rev.:2018)

N-channel 500 V, 0.73 Ω typ., 5 A, MDmesh™ II Power MOSFETs in DPAK and TO-220 packages

STMicroelectronics 

STD8NM50N, STP8NM50N

Electrical characteristics

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM(1)

VSD(2)

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)

Forward on voltage

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

-

VGS = 0 V, ISD = 5 A

-

ISD = 5 A, di/dt = 100 A/µs,

-

VDD = 60 V

-

(see Figure 16. Test circuit for

inductive load switching and diode

-

recovery times)

5

A

20

A

1.5

V

187

ns

1.3

μC

14

A

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs,

-

224

ns

Qrr

Reverse recovery charge

VDD = 60 V, Tj = 150 °C

-

1.5

μC

(see Figure 16. Test circuit for

IRRM

Reverse recovery current

inductive load switching and diode

-

13

A

recovery times)

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS6808 - Rev 7

page 4/21

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