STD8NM60N-1 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STD8NM60N-1

N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

STMicroelectronics 

STx8NM60N

N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET

TO-220, TO-220FP, IPAK, DPAK, D2PAK

Features

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

STB8NM60N

STD8NM60N

STD8NM60N-1

STF8NM60N

STP8NM60N

650 V

650 V

650 V

650 V

650 V

< 0.65 Ω

< 0.65 Ω

< 0.65 Ω

< 0.65 Ω

< 0.65 Ω

7A

7A

7A

7 A(1)

7A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

Application

■ Switching applications

Description

This series of devices implements second

generation MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

Table 1. Device summary

Order codes

STB8NM60N

STD8NM60N

STD8NM60N-1

STF8NM60N

STP8NM60N

Marking

B8NM60N

D8NM60N

D8NM60N

F8NM60N

P8NM60N

3

2

1

TO-220

3

1

DPAK

3

2

1

IPAK

3

1

D²PAK

3

2

1

TO-220FP

Figure 1. Internal schematic diagram

$

'

3

!-V

Package

D²PAK

DPAK

IPAK

TO-220FP

TO-220

Packaging

Tape and reel

Tape and reel

Tube

Tube

Tube

November 2008

Rev 3

1/19

www.st.com

19

Share Link: