STD8NM60N-1 데이터 시트보기 (PDF) - STMicroelectronics
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STD8NM60N-1
STMicroelectronics
STD8NM60N-1 Datasheet PDF : 19 Pages
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STx8NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 3.5 A,
10
ns
RG = 4.7 Ω, VGS = 10 V
12
ns
(see Figure 18),
40
ns
(see Figure 23)
10
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD
ISDM (1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V, Tj = 25
°C (see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7A, di/dt = 100
A/µs, VDD = 30 V,
Tj=150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Typ.
310
2.40
15
480
3.50
15
Max. Unit
7
A
28 A
1.3 V
ns
µC
A
ns
µC
A
5/19
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