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STPS1045D 데이터 시트보기 (PDF) - STMicroelectronics

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STPS1045D
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS1045D Datasheet PDF : 6 Pages
1 2 3 4 5 6
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS1045D/F/FP
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(TO-220AC).
IM(A)
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=100°C
Tc=150°C
1E+0
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=50°C
Tc=100°C
Tc=150°C
1E+0
Fig. 6-1: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
3/6

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