STPS1045BY-TR 데이터 시트보기 (PDF) - STMicroelectronics
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STPS1045BY-TR Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS1045B-Y
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
VRRM Repetitive peak reverse voltage
45
IF(RMS)/pin Forward rms current
7
IF(AV) Average forward current
Tc = 150 °C δ = 0.5
10
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
75
IRRM Repetitive peak reverse current
tp = 2 µs, F= 1 kHz
1
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
4000
Tstg Storage temperature range
Tj
Operating junction temperature range(1)
-65 to +175
-40 to +175
dV/dt Critical rate of rise of reverse voltage
10000
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Symbol
Parameter
Value
Rth(j-c) Junction to case
3
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max.
IR(1)
Reverse leakage
current
Tj = 25 °C
-
VR = VRRM
Tj = 125 °C
-
Tj = 25 °C
-
IF = 10 A
VF(2) Forward voltage drop
Tj = 125 °C
-
Tj = 25 °C
-
IF = 20 A
Tj = 125 °C
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
-
100
7
15
-
0.63
0.50 0.57
-
0.84
0.65 0.72
Unit
V
A
A
A
A
W
°C
°C
V/µs
Unit
°C/W
Unit
μA
mA
V
2/7
Doc ID 17265 Rev 1
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