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STPS1045B-Y 데이터 시트보기 (PDF) - STMicroelectronics

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STPS1045B-Y
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS1045B-Y Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STPS1045B-Y
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature ( δ = 0.5)
PF(AV)(W)
8
7
6
5
4
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
δ=1
IF(AV)(A)
12
10
8
6
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
3
4
2
T
1
2
0
IF(AV)(A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12
0
Rth(j-a)=70°C/W
Tamb(°C)
25
50
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Figure 5.
IM(A)
120
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
100
0.8
80
60
40
IM
20
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
TC=50°C
0.6
δ = 0.5
TC=100°C
TC=150°C
1E+0
0.4
δ = 0.2
0.2
δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Doc ID 17265 Rev 1
3/7

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