STPS1045DEE-TR 데이터 시트보기 (PDF) - STMicroelectronics
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STPS1045DEE-TR Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS1045DEE
Table 2. Absolute ratings (limiting values Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
15
A
IF(AV) Average forward current
Tc = 145 °C = 0.5
10
A
IFSM
PARM(1)
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak avalanche power tp = 10 µs Tj = 125 °C
100
A
300
W
Tstg Storage temperature range
-65 to +175 °C °C
Tj Maximum operating junction temperature
175
°C
1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement
using Schottky rectifier avalanche specification”.
Table 3. Thermal resistance
Symbol
Parameter
Rth(j-c) Junction to case
Value
4
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C
VR = VRRM
-
-
Tj = 25 °C IF = 10A
VF(2)
Forward voltage drop
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 20A
-
-
-
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.41 x IF(AV) + 0.012 x IF2(RMS)
200
µA
15
40
mA
0.59
0.45 0.53
V
0.72
0.57 0.65
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Doc ID 023252 Rev 1
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