STPS1045DEE 데이터 시트보기 (PDF) - STMicroelectronics
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STPS1045DEE Datasheet PDF : 8 Pages
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STPS1045DEE
Characteristics
Figure 1. Average forward power dissipation Figure 2. Average forward current versus
versus average forward current
ambient temperature( = 0.5)
PF(AV)(W)
9
8
7
δ = 0.2
6
δ = 0.1
5
δ = 0.05
4
3
2
1
IF(AV)(A)
0
0
2
4
6
8
δ = 0.5
δ=1
T
δ =tp/T
10
12
tp
14
IF(AV)(A)
12
10
8
6
4
T
2
δ =tp/T
tp
0
0
25
50
Rth(j-a)= Rth( j- c)
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM (t p )
1 PARM(10 µs)
0.1
0.01
0.001
1
t p(µs)
10
100
1000
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
Figure 5.
Reverse leakage current versus
reverse voltage applied(typical
values)
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
Tj = 50 °C
Figure 6.
C(pF)
1000
1.E-02
1.E-03
0
Tj = 25 °C
VR(V)
100
5
10 15 20 25 30 35 40 45
1
Junction capacitance versus
reverse voltage applied (typical
values)
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
10
100
Doc ID 023252 Rev 1
3/8
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