STPS1045H 데이터 시트보기 (PDF) - STMicroelectronics
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STPS1045H Datasheet PDF : 5 Pages
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STPS1045B/H
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
Value
3
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Tests Conditions
Tj = 25°C
VR = 45 V
Tj = 125°C
Tj = 25°C
IF = 10 A
Tj = 125°C IF = 10 A
Tj = 25°C
IF = 20 A
Tj = 125°C IF = 20 A
Min.
Typ.
7
0.5
0.65
Max.
100
15
0.63
0.57
0.84
0.72
Pulse test : * tp = 380 µs, δ < 2 %
**tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.015 IF2(RMS)
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(av)(W)
8
7
6
5
4
3
2
1
0
012
δ = 0.05 δ = 0.1 δ = 0.2
IF(av) (A)
34567
δ = 0.5
δ=1
T
δ=tp/T
tp
8 9 10 11 12
IF(av)(A)
12
10
Rth(j-a)=Rth(j-c)
8
Rth(j-a)=15°C/W
6
4
T
2
δ=tp/T
tp
0
0
25
Rth(j-a)=70°C/W
Tamb(°C)
50 75 100
125
150
175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
2/5
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