STPS1045H 데이터 시트보기 (PDF) - STMicroelectronics

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STPS1045H

POWER SCHOTTKY RECTIFIER

STMicroelectronics 

STPS1045B/H

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

IM(A)

120

100

80

60

40

20 IM

t

δ=0.5

0

1E-3

1E-2

t(s)

1E-1

Tc=50°C

Tc=100°C

Tc=150°C

1E+0

Zth(j-c)/Rth(j-c)

1.0

0.8

0.6 δ = 0.5

0.4

δ = 0.2

0.2 δ = 0.1

0.0

1E-4

Single pulse

1E-3

tp(s)

1E-2

T

δ=tp/T

1E-1

tp

1E+0

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

IR(µA)

1E+5

1E+4

1E+3

1E+2

1E+1

1E+0

1E-1

05

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

10 15 20 25 30 35 40 45

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

1000

500

F=1MHz

Tj=25°C

200

100

1

2

VR(V)

5

10

20

50

Fig. 9: Forward voltage drop versus forward

current (maximum values).

IFM(A)

100.0

Tj=125°C

(Typical values)

10.0

Tj=125°C

Tj=25°C

1.0

VFM(V)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board, copper thickness: 35µm)

(STPS1045B).

Rth(j-a) (°C/W)

100

80

60

40

20

S(Cu) (cm²)

0

0 2 4 6 8 10 12 14 16 18 20

3/5

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