STPS2545CT-Y 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2545CT-Y Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STPS2545CT-Y
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
45
IF(RMS) Forward rms current
30
IF(AV) Average forward current δ = 0.5
Tc = 160 °C Per diode
12.5
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
200
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
4800
Tstg Storage temperature range
Tj Operating junction temperature range(1)
-65 to + 175
-40 to + 175
dV/dt Critical rate of rise reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink.
Table 3. Thermal resistances parameters
V
A
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Rth (c) Coupling
Per diode
1.6
°C/W
0.6
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 125 °C
VF (1)
Tj = 125 °C
Forward voltage drop Tj = 25 °C
IF = 12.5 A
IF = 25 A
Tj = 125 °C IF = 25 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.012 x IF2(RMS)
125
µA
9
25
mA
0.50 0.57
0.84
V
0.65 0.72
2/7
Doc ID 18183 Rev 2
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