STPS2H100RL 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2H100RL Datasheet PDF : 4 Pages
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STPS2H100
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-l)
Junction to ambient
Junction to lead
Parameter
Lead length = 10 mm
Lead lenght = 10 mm
Value
100
35
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
Min.
IR * Reverse leakage current Tj = 25°C
VR = VRRM
VF ** Forward voltage drop
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 2 A
IF = 2 A
Tj = 25°C
Tj = 125°C
IF = 4 A
IF = 4 A
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.62 x IF(AV) + 0.04 x IF2(RMS)
Typ.
0.2
0.65
0.72
Max.
1
0.5
0.86
0.70
0.92
0.78
Unit
µA
mA
V
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(AV)(W)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4
δ = 0.05
δ = 0.1 δ = 0.2 δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
IF(AV)(A)
2.2
2.0
Rth(j-a)=Rth(j-I)
1.8
1.6
1.4
1.2
Rth(j-a)=100°C/W
1.0
0.8
0.6
0.4
0.2
0.0
0
T
δ=tp/T
25
tp
50
Tamb(°C)
75
100
125
150
175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
2/4
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