STPS2H100RL 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2H100RL Datasheet PDF : 4 Pages
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STPS2H100
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
10
9
8
7
6
5
4
3
2
IM
1
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01
T
δ=tp/T
1.E+02
tp
1.E+03
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1.E+03
1.E+02
Tj=150°C
Tj=125°C
1.E+01
1.E+00
Tj=100°C
Tj=75°C
Tj=50°C
1.E-01
Tj=25°C
1.E-02
VR(V)
0
20
40
60
80
100
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
100
F=1MHz
VOSC=30mV
Tj=25°C
VR(V)
10
1
10
100
Fig. 9-1: Forward voltage drop versus forward
current (low level).
IFM(A)
2.0
1.8
1.6
Tj=125°C
(maximum values)
1.4
1.2
Tj=125°C
(typical values)
1.0
0.8
Tj=25°C
(maximum values)
0.6
0.4
0.2
VFM(V)
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 9-2: Forward voltage drop versus forward
current (high level).
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
10
Tj=25°C
(maximum values)
VFM(V)
1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8
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