STPS2L30
Characteristics (curves)
Figure 7. Relative variation of thermal impedance junction Figure 8. Relative variation of thermal impedance junction
to lead versus pulse duration (SMB Flat)
to ambient versus pulse duration (SMA Flat)
1.0 Zth(j-l) / Rth(j-l)
0.9
SMB Flat
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-04
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
Zth(j-a)/ Rth(j-a)
1.0
0.9
SMA Flat
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-02
1.E-01
1.E+00
tp(s)
1.E+01
1.E+02
1.E+03
Figure 9. Reverse leakage current versus reverse voltage Figure 10. Junction capacitance versus reverse voltage
applied (typical values)
applied (maximum values)
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
5
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
Tj = 25 °C
VR(V)
10
15
20
25
30
C(pF)
1000
100
10
1
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
10
100
Figure 11. Forward voltage drop versus forward current
(high level)
10.0 IF(A)
Tj=125°C
(Mmaximum values)
1.0
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
0.1
VF(V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 12. Forward voltage drop versus forward current
(low level)
IF(A)
3.0
2.5
Tj=125°C
(Mmaximum values)
2.0
Tj=125°C
1.5
(typical values)
1.0
Tj=25°C
(maximum values)
0.5
VF(V)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
DS1526 - Rev 7
page 4/14