STPS3045G 데이터 시트보기 (PDF) - STMicroelectronics
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STPS3045G Datasheet PDF : 5 Pages
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STPS3045G
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
Value
1
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests Conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
VF ** Forward voltage drop
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 30 A
IF = 60 A
IF = 60 A
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.48 x IF(AV) + 0.005 IF2(RMS)
Min. Typ. Max. Unit
500 µA
20 80 mA
0.53 0.63 V
0.84
0.68 0.78
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(av)(W)
25
δ = 0.1 δ = 0.2
δ = 0.5
20
δ = 0.05
δ=1
15
10
T
5
IF(av) (A)
δ=tp/T
tp
0
0 5 10 15 20 25 30 35 40
IF(av)(A)
35
30
Rth(j-a)=Rth(j-c)
25
20
15
10
Rth(j-a)=30°C/W
5
Tamb(°C)
0
0
25 50 75 100
T
δ=tp/T
tp
125 150
175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100
1000
0
25
50
75
100
125
150
2/5
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