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STPS3045CI 데이터 시트보기 (PDF) - STMicroelectronics

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STPS3045CI
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS3045CI Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STPS3045CT/CG/CR/CP/CPI/CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
45
V
IF(RMS) RMS forward current
30
A
IF(AV) Average forward current TO-220AB
Tc = 155°C Per diode
15
A
δ = 0.5
D2PAK / I2PAK
Per device
30
SOT-93
TO-247
TOP-3I
Tc = 150°C
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
IRRM Repetitive peak reverse current
tp = 2 µs square
F = 1kHz
1
A
IRSM Non repetitive peak reverse current
Tstg Storage temperature range
tp = 100 µs square
3
A
-65 to +175 °C
Tj Maximum operating junction temperature *
175
°C
dV/dt Critical rate of rise of reverse voltage
10000 V/µs
* : dPtot <
1
thermal runaway condition for a diode on its own heatsink
dTj
Rth( j a)
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
TO-220AB
D2PAK / I2PAK
Per diode
Total
SOT-93
TO-247
Per diode
Total
TOP-3I
Per diode
Total
Rth (c)
TO-220AB
D2PAK / I2PAK
SOT-93
TO-247
Coupling
TOP-3I
Coupling
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
Value
1.60
0.85
1.5
0.8
2.2
1.6
0.10
Unit
°C/W
1.0
2/9

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