STPS20S100CT 데이터 시트보기 (PDF) - STMicroelectronics
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STPS20S100CT Datasheet PDF : 7 Pages
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STPS20S100C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4 δ = 0.2
0.3 δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
T
1.E-01
δ=tp/T
tp
1.E+00
Figure 8: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode) (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5 δ = 0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-03
1.E-02
tp(s)
1.E-01
T
δ=tp/T
1.E+00
tp
1.E+01
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
IR(mA)
1.E+01
1.E+00
1.E-01
Tj=150°C
Tj=125°C
Tj=100°C
1.E-02
Tj=75°C
Tj=50°C
1.E-03
1.E-04
VR(V)
Tj=25°C
10
20
30
40
50
60
70
80
90 100
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
VR(V)
10
1
10
100
Figure 9: Forward voltage drop versus forward
current (per diode)
IFM(A)
100
Tj=125°C
(maximum values)
Tj=125°C
(typical values)
Tj=25°C
10
(maximum values)
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
4/7
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