STPS30100ST 데이터 시트보기 (PDF) - STMicroelectronics
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STPS30100ST Datasheet PDF : 7 Pages
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STPS30100ST
Characteristics
Figure 1. Conduction losses versus average Figure 2. Average forward current versus
current
ambient temperature (δ = 0.5)
PF(av)(W)
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
4
δ=0.05
δ=0.1
δ=0.2
IF(av)(A)
8
12
16
20
δ=0.5
δ=1
T
δ=tp/T
tp
24
28
32
36
35 IF(av)(A)
30
Rth(j-a)=Rth(j-c)
25
20
15
10
T
Rth(j-a)=15°C/W
5
δ=tp/T
tp
0
Tamb(°C)
0
25
50
75
100
125
150
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1µs)
1
PARM(tp)
PARM(25°C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
0.01
0.1
tp(µs)
1
10
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values)
Relative variation of thermal
impedance junction to case versus
pulse duration
IM(A)
350
300
250
200
150
100
IM
50
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
3/7
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