STPS3030CR 데이터 시트보기 (PDF) - STMicroelectronics
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STPS3030CR Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS3030CT/CG/CR
Table 1. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
30
IF(RMS) RMS forward current
30
IF(AV) Average forward current
Tc = 135° C Per diode
15
δ = 0.5
Per device
30
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
250
IRRM Peak repetitive reverse current
tp = 2 µs square F= 1 kHz
1
IRSM Non repetitive peak reverse current tp = 100 µs square
3
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C
4100
Tstg Storage temperature range
Tj
Maximum operating junction temperature (1)
-65 to + 150
150
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25° C)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
10000
Table 2. Thermal resistance
Symbol
Parameter
Value
V
A
A
A
A
A
W
°C
°C
V/µs
Unit
Rth(j-c) Junction to case TO-220AB - D2PAK - I2PAK
Rth(c)
Per diode
Total
Coupling
1.2
0.8
°C/W
0.4
Table 3.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25° C
Tj = 125° C
VR = VRRM
Tj = 25° C
IF = 15 A
VF(1) Forward voltage drop
Tj = 125° C
Tj = 25° C
IF = 15 A
IF = 30 A
Tj = 125° C
IF = 30 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.26 x IF(AV) + 0.0107 IF2(RMS)
0.23 1.0
mA
125 180
0.44 0.49
0.36 0.40
V
0.53 0.58
0.49 0.53
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