STPS3030CR 데이터 시트보기 (PDF) - STMicroelectronics

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STPS3030CR

Low drop power Schottky rectifier

STMicroelectronics 

Characteristics

STPS3030CT/CG/CR

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values)

IR(mA)

1.E+03

Tj=150°C

1.E+02

Tj=125°C

Figure 8.

C(nF)

10.0

1.E+01

Tj=100°C

Tj=75°C

1.0

1.E+00

Tj=50°C

1.E-01

1.E-02

0

Tj=25°C

VR(V)

0.1

5

10

15

20

25

30

1

Junction capacitance versus

reverse voltage applied (typical

values)

F=1MHz

Vosc=30mV

Tj=25°C

VR(V)

10

100

Figure 9. Forward voltage drop versus

forward current

IFM(A)

100

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

10

Tj=25°C

(Maximum values)

VFM(V)

1

0.0

0.2

0.4

0.6

0.8

1.0

Figure 10.

Thermal resistance junction to

ambient versus copper surface

under tab (epoxy printed board

FR4, Cu = 35 µm)

Rth(j-a)(°C/W)

80

70

D²PAK

60

50

40

30

20

10

S(cm²)

0

1.2

0

5

10

15

20

25

30

35

40

4/9

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