STPS30120CR 데이터 시트보기 (PDF) - STMicroelectronics

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STPS30120CR

Power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS30120C

Table 2. Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

VRRM Repetitive peak reverse voltage

IF(RMS) Forward rms current

IF(AV)

Average forward

current

δ = 0.5

Tc = 145 °C

Per diode

Per device

IFSM Surge non repetitive forward current

tp = 10 ms sinusoidal

PARM Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

VARM(1)

Maximum repetitive

peak avalanche voltage

tp = 1 µs, Tj < 150 °C, IAR < 13.4 A

120

30

15

30

180

6700

150

VASM(1)

Maximum single pulse

peak avalanche voltage

tp = 1 µs, Tj < 150 °C, IAR < 13.4 A

150

Tstg Storage temperature range

Tj Maximum operating junction temperature(2)

-65 to + 175

175

1. Refer to Figure 11

2.

dPtot

dTj

<1

Rth(j-a)

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Symbol

Parameter

Value

Rth(j-c) Junction to case

Rth(c) Coupling

Per diode

2.2

Total

1.3

Total

0.3

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

Unit

V

A

A

A

W

V

V

°C

°C

Unit

°C/W

°C/W

2/8

Doc ID 11213 Rev 3

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