STPS6045 데이터 시트보기 (PDF) - STMicroelectronics
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STPS6045 Datasheet PDF : 5 Pages
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Fig. 3-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (SOT-93 and TO-247).
STPS6045CP/CPI/CW
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TOP-3I).
IM(A)
350
300
250
200
150
100
IM
50
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
IM(A)
250
200
150
100
50
IM
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
Fig. 4: Relative variation of thermal transient Fig. 5: Reverse leakage current versus reverse
impedance junction to case versus pulse duration. voltage applied (typical values, per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-4
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
IR(µA)
1E+5
1E+4
1E+3
1E+2
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1E+1
Tj=25°C
1E+0
0
5 10 15 20 25 30 35 40 45
VR(V)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
C(nF)
5.0
1.0
0.1
1
2
F=1MHz
Tj=25°C
IFM(A)
200
100
10
Typical values
Tj=125°C
Tj=25°C
Tj=125°C
VR(V)
5
10
20
VFM(V)
1
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
3/5
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