STPS40170CW 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40170CW Datasheet PDF : 8 Pages
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STPS40170C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
22
20
d=0.05
d=0.1
d=0.2
d=0.5
d=1
18
16
14
12
10
8
6
T
4
2
IF(AV)(A)
d=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
22
20
18
16
14
12
10
8
6
T
4
2
d=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
IM(A)
250
200
150
100
50
IM
0
1.E-03
t
d =0.5
1.E-02
t(s)
1.E-01
TC=50°C
TC=75°C
TC=125°C
1.E+00
Figure 6: Relative variation of thermal
impedance junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
d=0.5
0.6
0.5
0.4 d=0.2
0.3 d=0.1
0.2
0.1
Single pulse
0.0
1.E-03
1.E-02
tP(s)
T
d=tp/T
1.E-01
tp
1.E+00
3/8
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