STPS40170CW 데이터 시트보기 (PDF) - STMicroelectronics
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STPS40170CW Datasheet PDF : 8 Pages
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STPS40170C
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
IR(µA)
1.E+05
1.E+04
1.E+03
1.E+02
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
1.E+01
Tj=50°C
1.E+00
Tj=25°C
1.E-01
VR(V)
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
100
10
1
VR(V)
10
100
1000
Figure 9: Forward voltage drop versus forward
current (per diode, low level)
IFM(A)
20
18
16
Tj=125°C
(Maximum values)
14
12
Tj=125°C
(Typical values)
10
8
6
4
Tj=25°C
(Maximum values)
2
VFM(V)
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 10: Forward voltage drop versus
forward current (per diode, high level)
IFM(A)
1000
100
10
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Figure 11: Thermal resistance junction to am-
bient versus copper surface under tab (epoxy
printed board FR4, Cu = 35µm) (D2PAK)
Rth(j-a)(°C/W)
80
70
D²PAK
60
50
40
30
20
10
0
0
SCU(cm²)
5
10
15
20
25
30
35
40
4/8
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