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STPS40120CT(2006) 데이터 시트보기 (PDF) - STMicroelectronics

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STPS40120CT
(Rev.:2006)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS40120CT Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
1
Characteristics
STPS40120C
Table 2. Thermal parameters
Symbol
Parameter
Value
Rth(j-c)
Junction to case
Per diode
Total
1.6
0.85
Rth(c)
Coupling
Total
0.1
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 3.
Symbol
Static electrical characteristics (per diode)
Test conditions
Min. Typ.
IR(1)
Reverse leakage current
Tj = 25° C
Tj = 125° C VR = VRRM
4
Tj = 25° C
IF = 7.5 A
Tj = 125° C
0.57
VF(2) Forward voltage drop
Tj = 25° C
IF = 20A
Tj = 125° C
0.69
Tj = 25° C
IF = 40 A
Tj = 125° C
0.83
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.58 x IF(AV) + 0.0075 IF2(RMS)
Unit
° C/W
° C/W
Max. Unit
25
μA
12
mA
0.73
0.61
0.9
V
0.73
1
0.88
2/8

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